本實驗的目的是希望以低溫、大範圍的非晶基板上成長筆直，並且具有穩定場發射特性的場發射體。我們選擇矽奈米線做為場發射體的材料，期望藉由其良好的長寬比、小的尖端曲率半徑，獲得優異的場發射特性。我們以金當觸媒，利用熱燈絲輔助化學氣相沉積在溫度為500℃成長單晶矽奈米線，製程氣體為四氫化矽，並加入不同摻雜氣體成長n型、p型、本質矽奈米線。另外再加入微影製程將觸媒定位，減少矽奈米線的密度。我們將測量到的電流電壓曲線以F-N理論來分析場發射的行為。將不同摻雜型態、熱燈絲輔助或無熱燈絲輔助成長，以及有無patterned觸媒的矽奈米線綜合比較之後，我們得到最好的結果為n型摻雜，有patterned觸媒，使用熱燈絲輔助法成長的矽奈米線。其有效面積為0.4cm2，起始電場定義為0.01mA/cm2，測量結果為起始電場1.2V/μm；當電場為3.9V/μm時得到的電流密度為0.4mA/cm2。 In this study, we expect to fabricate a vertical and stable emitter on large area noncrystalline substrates at low temperature. We had adopted a potential material, silicon nanowires, which are great in high aspect ratio, tiny curvature, to improve the field emission characteristics.Field emission of single crystal silicon nanowires were synthesized by hot wire assisted chemical vapor deposition approach, and the experiment parameters, respectively, at 500℃ from silane and switching doping gas flow in the presence of a gold catalyst. In order to reduce the deposition yield, we used photolithography patterning of the gold catalyst to precisely position each SiNW forests.The field emission characteristics of the SiNWs were studied based on current-voltage measurements and the Fowler-Nordheim equation.We compared the field emission characteristics of different type SiNWs, patterned or not, and whether had hot wire assisted. The patterned n-type SiNWs forests were synthesized using hot wire assisted chemical vapor deposition approach is the best. An emission current density of 0.4mA/cm2 over a 0.4cm2 area was obtained at an electric field of 3.9 V/μm with turn-on field of 1.2 V/μm at 0.01 mA/cm2, β is 1.13×104.
